Datasheet | NGTD17T65F2SWK |
File Size | 89.69 KB |
Total Pages | 3 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | NGTD17T65F2SWK, NGTD17T65F2WP |
Description | IGBT TRENCH FIELD STOP 650V DIE, IGBT TRENCH FIELD STOP 650V DIE |
NGTD17T65F2SWK - ON Semiconductor
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ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A Power - Max - Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A Power - Max - Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |