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NGTD17T65F2SWK Datasheet

NGTD17T65F2SWK Cover
DatasheetNGTD17T65F2SWK
File Size89.69 KB
Total Pages3
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NGTD17T65F2SWK, NGTD17T65F2WP
Description IGBT TRENCH FIELD STOP 650V DIE, IGBT TRENCH FIELD STOP 650V DIE

NGTD17T65F2SWK - ON Semiconductor

NGTD17T65F2SWK Datasheet Page 1
NGTD17T65F2SWK Datasheet Page 2
NGTD17T65F2SWK Datasheet Page 3

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URL Link

NGTD17T65F2SWK

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

NGTD17T65F2WP

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die