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NHPJ08S600G Datasheet

NHPJ08S600G Cover
DatasheetNHPJ08S600G
File Size61.13 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NHPJ08S600G, NHPV08S600G
Description DIODE GEN PURP 600V 8A TO220FP, DIODE GEN PURP 600V 8A TO220-2

NHPJ08S600G - ON Semiconductor

NHPJ08S600G Datasheet Page 1
NHPJ08S600G Datasheet Page 2
NHPJ08S600G Datasheet Page 3
NHPJ08S600G Datasheet Page 4

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URL Link

NHPJ08S600G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

3.2V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

50ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2 Full Pack

Supplier Device Package

TO-220FP

Operating Temperature - Junction

-55°C ~ 150°C

NHPV08S600G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

3.2V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

50ns

Current - Reverse Leakage @ Vr

30µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220-2

Operating Temperature - Junction

-55°C ~ 150°C