Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NHPM120T3G |
| File Size | 65.93 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NHPM120T3G, NRVHPM120T3G |
| Description | DIODE GEN PURP 200V 1A POWERMITE, DIODE GEN PURP 200V 1A POWERMITE |
NHPM120T3G - ON Semiconductor
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NHPM120T3G | ON Semiconductor | DIODE GEN PURP 200V 1A POWERMITE | 450 More on Order |
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NRVHPM120T3G | ON Semiconductor | DIODE GEN PURP 200V 1A POWERMITE | 316 More on Order |
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Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 500nA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 25ns Current - Reverse Leakage @ Vr 500nA @ 200V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -65°C ~ 175°C |