Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NP109N055PUJ-E2B-AY |
| File Size | 310.75 KB |
| Total Pages | 10 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NP109N055PUJ-E2B-AY, NP109N055PUJ-E1B-AY |
| Description | TRANSISTOR, MOSFET N-CH 55V MP-25ZP/TO-263 |
NP109N055PUJ-E2B-AY - Renesas Electronics America
The Products You May Be Interested In
 |
NP109N055PUJ-E2B-AY | Renesas Electronics America | TRANSISTOR | 166 More on Order |
|
NP109N055PUJ-E1B-AY | Renesas Electronics America | MOSFET N-CH 55V MP-25ZP/TO-263 | 470 More on Order |
URL Link
|
Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.2mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10350pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 220W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |