Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NP160N055TUJ-E2-AY |
| File Size | 208.97 KB |
| Total Pages | 8 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NP160N055TUJ-E2-AY, NP160N055TUJ-E1-AY |
| Description | TRANSISTOR, MOSFET N-CH 55V 160A TO-263-7 |
NP160N055TUJ-E2-AY - Renesas Electronics America
The Products You May Be Interested In
 |
NP160N055TUJ-E2-AY | Renesas Electronics America | TRANSISTOR | 390 More on Order |
|
NP160N055TUJ-E1-AY | Renesas Electronics America | MOSFET N-CH 55V 160A TO-263-7 | 403 More on Order |
URL Link
|
Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10350pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 250W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |