Datasheet | NP22N055SLE-E2-AY |
File Size | 291.25 KB |
Total Pages | 9 |
Manufacturer | Renesas Electronics America |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | NP22N055SLE-E2-AY, NP22N055SLE-E1-AY |
Description | TRANSISTOR, MOSFET N-CH 55V 22A TO-252 |
NP22N055SLE-E2-AY - Renesas Electronics America
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NP22N055SLE-E2-AY | Renesas Electronics America | TRANSISTOR | 149 More on Order |
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NP22N055SLE-E1-AY | Renesas Electronics America | MOSFET N-CH 55V 22A TO-252 | 458 More on Order |
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Renesas Electronics America Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Renesas Electronics America Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 22A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 37mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V FET Feature - Power Dissipation (Max) 1.2W (Ta), 45W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 (MP-3ZK) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |