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NP22N055SLE-E2-AY Datasheet

NP22N055SLE-E2-AY Cover
DatasheetNP22N055SLE-E2-AY
File Size291.25 KB
Total Pages9
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts NP22N055SLE-E2-AY, NP22N055SLE-E1-AY
Description TRANSISTOR, MOSFET N-CH 55V 22A TO-252

NP22N055SLE-E2-AY - Renesas Electronics America

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URL Link

NP22N055SLE-E2-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NP22N055SLE-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

22A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

37mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 45W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252 (MP-3ZK)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63