Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NP40N10VDF-E2-AY |
| File Size | 156.51 KB |
| Total Pages | 11 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NP40N10VDF-E2-AY, NP40N10VDF-E1-AY, NP40N10YDF-E1-AY, NP40N10PDF-E1-AY |
| Description | TRANSISTOR, TRANSISTOR, MOSFET N-CH 100V 40A MP-25ZP, MOSFET N-CH 100V 40A TO-263 |
NP40N10VDF-E2-AY - Renesas Electronics America
The Products You May Be Interested In
 |
NP40N10VDF-E2-AY | Renesas Electronics America | TRANSISTOR | 439 More on Order |
|
NP40N10VDF-E1-AY | Renesas Electronics America | TRANSISTOR | 489 More on Order |
|
NP40N10YDF-E1-AY | Renesas Electronics America | MOSFET N-CH 100V 40A MP-25ZP | 159 More on Order |
|
NP40N10PDF-E1-AY | Renesas Electronics America | MOSFET N-CH 100V 40A TO-263 | 422 More on Order |
URL Link
|
Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 25V FET Feature - Power Dissipation (Max) 1W (Ta), 120W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSON Package / Case 8-PowerLDFN |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 27mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 120W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |