Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NP90N04VUG-E1-AY |
| File Size | 311.45 KB |
| Total Pages | 10 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NP90N04VUG-E1-AY |
| Description | MOSFET N-CH TO-252 |
NP90N04VUG-E1-AY - Renesas Electronics America
The Products You May Be Interested In
 |
NP90N04VUG-E1-AY | Renesas Electronics America | MOSFET N-CH TO-252 | 496 More on Order |
URL Link
www.oemstron.com/datasheet/NP90N04VUG-E1-AY
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V FET Feature - Power Dissipation (Max) 1.2W (Ta), 105W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |