Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NP90N055NUK-S18-AY |
| File Size | 56.5 KB |
| Total Pages | 1 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NP90N055NUK-S18-AY, NP90N055MUK-S18-AY |
| Description | MOSFET N-CH 55V 90A TO-220, MOSFET N-CH 55V 90A TO-220 |
NP90N055NUK-S18-AY - Renesas Electronics America
The Products You May Be Interested In
 |
NP90N055NUK-S18-AY | Renesas Electronics America | MOSFET N-CH 55V 90A TO-220 | 115 More on Order |
|
NP90N055MUK-S18-AY | Renesas Electronics America | MOSFET N-CH 55V 90A TO-220 | 485 More on Order |
URL Link
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7350pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 176W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262-3 Package / Case TO-262-3 Full Pack, I²Pak |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 45A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7350pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 176W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack |