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| Datasheet | NRVBM110ET1G |
| File Size | 164.43 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NRVBM110ET1G |
| Description | DIODE SCHOTTKY 10V 1A POWERMITE |
NRVBM110ET1G - ON Semiconductor
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NRVBM110ET1G | ON Semiconductor | DIODE SCHOTTKY 10V 1A POWERMITE | 269 More on Order |
URL Link
www.oemstron.com/datasheet/NRVBM110ET1G
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Manufacturer ON Semiconductor Series POWERMITE® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 10V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 595mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1µA @ 10V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -55°C ~ 150°C |