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NSVBC124EDXV6T1G Datasheet

NSVBC124EDXV6T1G Cover
DatasheetNSVBC124EDXV6T1G
File Size151.99 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 6 part numbers
Associated Parts NSVBC124EDXV6T1G, NSBC124EDP6T5G, NSBC124EDXV6T5G, NSBC124EDXV6T1G, NSVMUN5212DW1T1G, MUN5212DW1T1G
Description TRANS 2NPN PREBIAS 0.5W SOT563, TRANS 2NPN PREBIAS 0.339W SOT963, TRANS 2NPN PREBIAS 0.5W SOT563, TRANS 2NPN PREBIAS 0.5W SOT563, TRANS 2NPN PREBIAS 0.25W SOT363

NSVBC124EDXV6T1G - ON Semiconductor

NSVBC124EDXV6T1G Datasheet Page 1
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NSVBC124EDXV6T1G Datasheet Page 3
NSVBC124EDXV6T1G Datasheet Page 4
NSVBC124EDXV6T1G Datasheet Page 5
NSVBC124EDXV6T1G Datasheet Page 6
NSVBC124EDXV6T1G Datasheet Page 7
NSVBC124EDXV6T1G Datasheet Page 8

The Products You May Be Interested In

NSVBC124EDXV6T1G NSVBC124EDXV6T1G ON Semiconductor TRANS 2NPN PREBIAS 0.5W SOT563 268

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NSBC124EDP6T5G NSBC124EDP6T5G ON Semiconductor TRANS 2NPN PREBIAS 0.339W SOT963 164

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NSBC124EDXV6T5G NSBC124EDXV6T5G ON Semiconductor TRANS 2NPN PREBIAS 0.5W SOT563 184

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NSBC124EDXV6T1G NSBC124EDXV6T1G ON Semiconductor TRANS 2NPN PREBIAS 0.5W SOT563 5319

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NSVMUN5212DW1T1G NSVMUN5212DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363 38310

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MUN5212DW1T1G MUN5212DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363 7035

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URL Link

NSVBC124EDXV6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

NSBC124EDP6T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

339mW

Mounting Type

Surface Mount

Package / Case

SOT-963

Supplier Device Package

SOT-963

NSBC124EDXV6T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

NSBC124EDXV6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

NSVMUN5212DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

MUN5212DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363