Semiconductors
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| Datasheet | NTA4151PT1 |
| File Size | 124.73 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NTA4151PT1, NTA4151PT1H, NTE4151PT1G, NTA4151PT1G |
| Description | MOSFET P-CH 20V 0.76A SOT-416, MOSFET P-CH 20V 0.76A SC75, MOSFET P-CH 20V 0.76A SC-89, MOSFET P-CH 20V 0.76A SOT-416 |
NTA4151PT1 - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V FET Feature - Power Dissipation (Max) 301mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-75, SOT-416 Package / Case SC-75, SOT-416 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V FET Feature - Power Dissipation (Max) 301mW (Tj) Operating Temperature - Mounting Type Surface Mount Supplier Device Package SC-75, SOT-416 Package / Case SC-75, SOT-416 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V FET Feature - Power Dissipation (Max) 313mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-89-3 Package / Case SC-89, SOT-490 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id 450mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V FET Feature - Power Dissipation (Max) 301mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-75, SOT-416 Package / Case SC-75, SOT-416 |