Semiconductors
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| Datasheet | NTB4302G |
| File Size | 80.72 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | NTB4302G, NTB4302, NTP4302G, NTB4302T4G, NTP4302, NTB4302T4 |
| Description | MOSFET N-CH 30V 74A D2PAK, MOSFET N-CH 30V 74A D2PAK, MOSFET N-CH 30V 74A TO220AB, MOSFET N-CH 30V 74A D2PAK, MOSFET N-CH 30V 74A TO220AB |
NTB4302G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 37A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 37A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 37A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 37A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 37A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 37A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 80W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |