Datasheet | NTD23N03RT4G |
File Size | 127.61 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 6 part numbers |
Associated Parts | NTD23N03RT4G, NTD23N03RG, NTD23N03R, NTD23N03R-1G, NTD23N03RT4, NTD23N03R-001 |
Description | MOSFET N-CH 25V 3.8A DPAK, MOSFET N-CH 25V 3.8A DPAK, MOSFET N-CH 25V 3.8A DPAK, MOSFET N-CH 25V 3.8A IPAK, MOSFET N-CH 25V 3.8A DPAK |
NTD23N03RT4G - ON Semiconductor
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URL Link
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V FET Feature - Power Dissipation (Max) 1.14W (Ta), 22.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V FET Feature - Power Dissipation (Max) 1.14W (Ta), 22.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V FET Feature - Power Dissipation (Max) 1.14W (Ta), 22.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V FET Feature - Power Dissipation (Max) 1.14W (Ta), 22.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V FET Feature - Power Dissipation (Max) 1.14W (Ta), 22.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta), 17.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.76nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 20V FET Feature - Power Dissipation (Max) 1.14W (Ta), 22.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |