Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NTD4302G |
| File Size | 138.4 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | NTD4302G, NTD4302-1G, NTD4302T4G |
| Description | MOSFET N-CH 30V 8.4A DPAK, MOSFET N-CH 30V 8.4A IPAK, MOSFET N-CH 30V 8.4A DPAK |
NTD4302G - ON Semiconductor
The Products You May Be Interested In
 |
NTD4302G | ON Semiconductor | MOSFET N-CH 30V 8.4A DPAK | 337 More on Order |
 |
NTD4302-1G | ON Semiconductor | MOSFET N-CH 30V 8.4A IPAK | 109 More on Order |
 |
NTD4302T4G | ON Semiconductor | MOSFET N-CH 30V 8.4A DPAK | 308 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 1.04W (Ta), 75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 1.04W (Ta), 75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 24V FET Feature - Power Dissipation (Max) 1.04W (Ta), 75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |