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NTGD3147FT1G Datasheet

NTGD3147FT1G Cover
DatasheetNTGD3147FT1G
File Size109.95 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTGD3147FT1G
Description MOSFET P-CH 20V 2.2A 6-TSOP

NTGD3147FT1G - ON Semiconductor

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NTGD3147FT1G NTGD3147FT1G ON Semiconductor MOSFET P-CH 20V 2.2A 6-TSOP 315

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URL Link

NTGD3147FT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

145mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-25°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6