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| Datasheet | NTH027N65S3F_F155 |
| File Size | 508.26 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTH027N65S3F_F155, NTH027N65S3F-F155 |
| Description | MOSFET N-CH 650V 27 MOHM TO247 P, SF3 FRFET 650V 27MOHM |
NTH027N65S3F_F155 - ON Semiconductor
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Manufacturer ON Semiconductor Series FRFET®, SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 27.4mOhm @ 35A, 10V Vgs(th) (Max) @ Id 5V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs 259nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7690pF @ 400V FET Feature - Power Dissipation (Max) 595W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer ON Semiconductor Series FRFET®, SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 27.4mOhm @ 35A, 10V Vgs(th) (Max) @ Id 5V @ 7.5mA Gate Charge (Qg) (Max) @ Vgs 259nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7690pF @ 400V FET Feature - Power Dissipation (Max) 595W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |