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| Datasheet | NTHD4N02FT1G |
| File Size | 72.29 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTHD4N02FT1G, NTHD4N02FT1 |
| Description | MOSFET N-CH 20V 2.9A CHIPFET, MOSFET N-CH 20V 2.9A CHIPFET |
NTHD4N02FT1G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.9A (Tj) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 910mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.9A (Tj) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 910mW (Tj) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |