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| Datasheet | NTHL080N120SC1 |
| File Size | 368.58 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NTHL080N120SC1 |
| Description | SIC MOS TO247 80MW 1200V |
NTHL080N120SC1 - ON Semiconductor
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NTHL080N120SC1 | ON Semiconductor | SIC MOS TO247 80MW 1200V | 757 More on Order |
URL Link
www.oemstron.com/datasheet/NTHL080N120SC1
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V Vgs(th) (Max) @ Id 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 20V Vgs (Max) +25V, -15V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 800V FET Feature - Power Dissipation (Max) 348W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |