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NTLGF3402PT1G Datasheet

NTLGF3402PT1G Cover
DatasheetNTLGF3402PT1G
File Size130.6 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NTLGF3402PT1G, NTLGF3402PT2G
Description MOSFET P-CH 20V 2.3A 6-DFN, MOSFET P-CH 20V 2.3A 6-DFN

NTLGF3402PT1G - ON Semiconductor

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URL Link

NTLGF3402PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

140mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.14W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DFN (3x3)

Package / Case

6-VDFN Exposed Pad

NTLGF3402PT2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

140mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.14W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DFN (3x3)

Package / Case

6-VDFN Exposed Pad