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| Datasheet | NTLGF3501NT1G |
| File Size | 87.57 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTLGF3501NT1G, NTLGF3501NT2G |
| Description | MOSFET N-CH 20V 2.8A 6-DFN, MOSFET N-CH 20V 2.8A 6-DFN |
NTLGF3501NT1G - ON Semiconductor
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Manufacturer ON Semiconductor Series FETKY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 90mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 10V FET Feature - Power Dissipation (Max) 1.14W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-DFN (3x3) Package / Case 6-VDFN Exposed Pad |
Manufacturer ON Semiconductor Series FETKY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 90mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 10V FET Feature - Power Dissipation (Max) 1.14W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-DFN (3x3) Package / Case 6-VDFN Exposed Pad |