Semiconductors
Passive Components
Sensors
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Optoelectronics
| Datasheet | NTLJS3180PZTBG |
| File Size | 117.26 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTLJS3180PZTBG, NTLJS3180PZTAG |
| Description | MOSFET P-CH 20V 3.5A 6-WDFN, MOSFET P-CH 20V 3.5A 6-WDFN |
NTLJS3180PZTBG - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 38mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 16V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WDFN (2x2) Package / Case 6-WDFN Exposed Pad |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 38mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 16V FET Feature - Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-WDFN (2x2) Package / Case 6-WDFN Exposed Pad |