Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NTMFD4C86NT1G |
| File Size | 131.54 KB |
| Total Pages | 12 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTMFD4C86NT1G, NTMFD4C86NT3G |
| Description | MOSFET 2N-CH 30V 8DFN, MOSFET 2N-CH 30V 8DFN |
NTMFD4C86NT1G - ON Semiconductor
The Products You May Be Interested In
 |
NTMFD4C86NT1G | ON Semiconductor | MOSFET 2N-CH 30V 8DFN | 393 More on Order |
 |
NTMFD4C86NT3G | ON Semiconductor | MOSFET 2N-CH 30V 8DFN | 416 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.3A, 18.1A Rds On (Max) @ Id, Vgs 5.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1153pF @ 15V Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package 8-DFN (5x6) |
Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.3A, 18.1A Rds On (Max) @ Id, Vgs 5.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1153pF @ 15V Power - Max 1.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package 8-DFN (5x6) |