Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

NTMFS4836NT1G Datasheet

NTMFS4836NT1G Cover
DatasheetNTMFS4836NT1G
File Size139.77 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NTMFS4836NT1G, NTMFS4836NT3G
Description MOSFET N-CH 30V 11A SO-8FL, MOSFET N-CH 30V 11A SO-8FL

NTMFS4836NT1G - ON Semiconductor

NTMFS4836NT1G Datasheet Page 1
NTMFS4836NT1G Datasheet Page 2
NTMFS4836NT1G Datasheet Page 3
NTMFS4836NT1G Datasheet Page 4
NTMFS4836NT1G Datasheet Page 5
NTMFS4836NT1G Datasheet Page 6
NTMFS4836NT1G Datasheet Page 7

The Products You May Be Interested In

NTMFS4836NT1G NTMFS4836NT1G ON Semiconductor MOSFET N-CH 30V 11A SO-8FL 220

More on Order

NTMFS4836NT3G NTMFS4836NT3G ON Semiconductor MOSFET N-CH 30V 11A SO-8FL 493

More on Order

URL Link

NTMFS4836NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2677pF @ 12V

FET Feature

-

Power Dissipation (Max)

890mW (Ta), 55.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

NTMFS4836NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2677pF @ 12V

FET Feature

-

Power Dissipation (Max)

890mW (Ta), 55.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads