![NTMFS4C027NT1G Cover](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs4c027nt1g-0001.jpg)
Datasheet | NTMFS4C027NT1G |
File Size | 134.92 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | NTMFS4C027NT1G, NTMFS4C027NT3G |
Description | MOSFET N-CH 30V 16.4A 52A 5DFN, MOSFET N-CH 30V 16.4A 52A 5DFN |
NTMFS4C027NT1G - ON Semiconductor
![NTMFS4C027NT1G Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs4c027nt1g-0001.jpg)
![NTMFS4C027NT1G Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs4c027nt1g-0002.jpg)
![NTMFS4C027NT1G Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs4c027nt1g-0003.jpg)
![NTMFS4C027NT1G Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs4c027nt1g-0004.jpg)
![NTMFS4C027NT1G Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs4c027nt1g-0005.jpg)
![NTMFS4C027NT1G Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs4c027nt1g-0006.jpg)
![NTMFS4C027NT1G Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/ntmfs4c027nt1g-0007.jpg)
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URL Link
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 15V FET Feature - Power Dissipation (Max) 2.51W (Ta), 25.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 15V FET Feature - Power Dissipation (Max) 2.51W (Ta), 25.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |