![NTMS5P02R2SG Cover](http://media.oemstron.com/oemstron/datasheet/sm/ntms5p02r2sg-0001.jpg)
Datasheet | NTMS5P02R2SG |
File Size | 134.87 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | NTMS5P02R2SG, NVMS5P02R2G, NTMS5P02R2G |
Description | MOSFET P-CH 20V 3.95A 8-SOIC, MOSFET P-CH 20V 5.4A 8SOIC, MOSFET P-CH 20V 3.95A 8-SOIC |
NTMS5P02R2SG - ON Semiconductor
![NTMS5P02R2SG Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/ntms5p02r2sg-0001.jpg)
![NTMS5P02R2SG Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/ntms5p02r2sg-0002.jpg)
![NTMS5P02R2SG Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/ntms5p02r2sg-0003.jpg)
![NTMS5P02R2SG Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/ntms5p02r2sg-0004.jpg)
![NTMS5P02R2SG Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/ntms5p02r2sg-0005.jpg)
![NTMS5P02R2SG Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/ntms5p02r2sg-0006.jpg)
![NTMS5P02R2SG Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/ntms5p02r2sg-0007.jpg)
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NTMS5P02R2G | ON Semiconductor | MOSFET P-CH 20V 3.95A 8-SOIC | 468 More on Order |
URL Link
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 16V FET Feature - Power Dissipation (Max) 790mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 16V FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.95A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 16V FET Feature - Power Dissipation (Max) 790mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |