Datasheet | NTP22N06 |
File Size | 194.58 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | NTP22N06, NTB22N06T4 |
Description | MOSFET N-CH 60V 22A TO220AB, MOSFET N-CH 60V 22A D2PAK-3 |
NTP22N06 - ON Semiconductor
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NTP22N06 | ON Semiconductor | MOSFET N-CH 60V 22A TO220AB | 482 More on Order |
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NTB22N06T4 | ON Semiconductor | MOSFET N-CH 60V 22A D2PAK-3 | 267 More on Order |
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ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 22A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 22A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V FET Feature - Power Dissipation (Max) 60W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |