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NTP5404NRG Datasheet

NTP5404NRG Cover
DatasheetNTP5404NRG
File Size77.59 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts NTP5404NRG, NTB5404NT4G, NVB5404NT4G
Description MOSFET N-CH 40V 136A TO220AB, MOSFET N-CH 40V 136A D2PAK, MOSFET N-CH 40V 24A D2PAK

NTP5404NRG - ON Semiconductor

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NTP5404NRG NTP5404NRG ON Semiconductor MOSFET N-CH 40V 136A TO220AB 203

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NTB5404NT4G NTB5404NT4G ON Semiconductor MOSFET N-CH 40V 136A D2PAK 205

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NVB5404NT4G NVB5404NT4G ON Semiconductor MOSFET N-CH 40V 24A D2PAK 1623

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URL Link

NTP5404NRG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

24A (Ta), 167A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 32V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 254W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NTB5404NT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

167A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 32V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 254W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NVB5404NT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

24A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

4.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

125nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 32V

FET Feature

-

Power Dissipation (Max)

5.4W (Ta), 254W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB