Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

NTR1P02LT3G Datasheet

NTR1P02LT3G Cover
DatasheetNTR1P02LT3G
File Size117.93 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts NTR1P02LT3G, NVTR01P02LT1G, NTR1P02LT1G
Description MOSFET P-CH 20V 1.3A SOT23-3, MOSFET P-CH 20V 1.3A SOT23, MOSFET P-CH 20V 1.3A SOT-23

NTR1P02LT3G - ON Semiconductor

NTR1P02LT3G Datasheet Page 1
NTR1P02LT3G Datasheet Page 2
NTR1P02LT3G Datasheet Page 3
NTR1P02LT3G Datasheet Page 4
NTR1P02LT3G Datasheet Page 5

The Products You May Be Interested In

NTR1P02LT3G NTR1P02LT3G ON Semiconductor MOSFET P-CH 20V 1.3A SOT23-3 173

More on Order

NVTR01P02LT1G NVTR01P02LT1G ON Semiconductor MOSFET P-CH 20V 1.3A SOT23 7831

More on Order

NTR1P02LT1G NTR1P02LT1G ON Semiconductor MOSFET P-CH 20V 1.3A SOT-23 118505

More on Order

URL Link

NTR1P02LT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

220mOhm @ 750mA, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 4V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

225pF @ 5V

FET Feature

-

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

NVTR01P02LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

220mOhm @ 750mA, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.1nC @ 4V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

225pF @ 5V

FET Feature

-

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

NTR1P02LT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

220mOhm @ 750mA, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.5nC @ 4V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

225pF @ 5V

FET Feature

-

Power Dissipation (Max)

400mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3