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NTS2101PT1 Datasheet

NTS2101PT1 Cover
DatasheetNTS2101PT1
File Size114.05 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NTS2101PT1, NTS2101PT1G
Description MOSFET P-CH 8V 1.4A SOT-323, MOSFET P-CH 8V 1.4A SOT-323

NTS2101PT1 - ON Semiconductor

NTS2101PT1 Datasheet Page 1
NTS2101PT1 Datasheet Page 2
NTS2101PT1 Datasheet Page 3
NTS2101PT1 Datasheet Page 4
NTS2101PT1 Datasheet Page 5

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URL Link

NTS2101PT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

640pF @ 8V

FET Feature

-

Power Dissipation (Max)

290mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-3 (SOT323)

Package / Case

SC-70, SOT-323

NTS2101PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

100mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

640pF @ 8V

FET Feature

-

Power Dissipation (Max)

290mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-3 (SOT323)

Package / Case

SC-70, SOT-323