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Datasheet | NTTFS4941NTAG |
File Size | 129.08 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | NTTFS4941NTAG, NTTFS4941NTWG |
Description | MOSFET N-CH 30V 8.3A 8WDFN, MOSFET N-CH 30V 8.3A 8WDFN |
NTTFS4941NTAG - ON Semiconductor
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URL Link
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.3A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1619pF @ 15V FET Feature - Power Dissipation (Max) 840mW (Ta), 25.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.3A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1619pF @ 15V FET Feature - Power Dissipation (Max) 840mW (Ta), 25.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |