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| Datasheet | NVATS4A101PZT4G |
| File Size | 439.26 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NVATS4A101PZT4G |
| Description | MOSFET P-CHANNEL 30V 27A ATPAK |
NVATS4A101PZT4G - ON Semiconductor
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NVATS4A101PZT4G | ON Semiconductor | MOSFET P-CHANNEL 30V 27A ATPAK | 459 More on Order |
URL Link
www.oemstron.com/datasheet/NVATS4A101PZT4G
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 27A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 30mOhm @ 13A, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 875pF @ 10V FET Feature - Power Dissipation (Max) 36W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package ATPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |