![NVB6411ANT4G Cover](http://media.oemstron.com/oemstron/datasheet/sm/nvb6411ant4g-0001.jpg)
Datasheet | NVB6411ANT4G |
File Size | 142.8 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | NVB6411ANT4G, NTB6411ANT4G, NTB6411ANG |
Description | MOSFET N-CH 100V 75A D2PAK, MOSFET N-CH 100V 72A D2PAK, MOSFET N-CH 100V 72A D2PAK |
NVB6411ANT4G - ON Semiconductor
![NVB6411ANT4G Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/nvb6411ant4g-0001.jpg)
![NVB6411ANT4G Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/nvb6411ant4g-0002.jpg)
![NVB6411ANT4G Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/nvb6411ant4g-0003.jpg)
![NVB6411ANT4G Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/nvb6411ant4g-0004.jpg)
![NVB6411ANT4G Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/nvb6411ant4g-0005.jpg)
![NVB6411ANT4G Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/nvb6411ant4g-0006.jpg)
![NVB6411ANT4G Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/nvb6411ant4g-0007.jpg)
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NTB6411ANG | ON Semiconductor | MOSFET N-CH 100V 72A D2PAK | 166 More on Order |
URL Link
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 72A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V FET Feature - Power Dissipation (Max) 217W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK-3 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 72A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V FET Feature - Power Dissipation (Max) 217W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14mOhm @ 72A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V FET Feature - Power Dissipation (Max) 217W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |