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| Datasheet | NVD4805NT4G |
| File Size | 140.9 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NVD4805NT4G, NTD4805N-35G, NTD4805N-1G, NTD4805NT4G |
| Description | MOSFET N-CH 30V 88A DPAK, MOSFET N-CH 30V 12.6A IPAK, MOSFET N-CH 30V 12.6A IPAK, MOSFET N-CH 30V 12.7A DPAK |
NVD4805NT4G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2865pF @ 12V FET Feature - Power Dissipation (Max) 1.41W (Ta), 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2865pF @ 12V FET Feature - Power Dissipation (Max) 1.41W (Ta), 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2865pF @ 12V FET Feature - Power Dissipation (Max) 1.41W (Ta), 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2865pF @ 12V FET Feature - Power Dissipation (Max) 1.41W (Ta), 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |