Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NVD5867NLT4G |
| File Size | 71.66 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | NVD5867NLT4G, NVD5867NLT4G-TB01, SVD5867NLT4G |
| Description | MOSFET N-CH 60V DPAK, MOSFET N-CH 60V 22A DPAK DPAK, MOSFET N-CH 60V 18A DPAK |
NVD5867NLT4G - ON Semiconductor
The Products You May Be Interested In
 |
NVD5867NLT4G | ON Semiconductor | MOSFET N-CH 60V DPAK | 474 More on Order |
|
NVD5867NLT4G-TB01 | ON Semiconductor | MOSFET N-CH 60V 22A DPAK DPAK | 414 More on Order |
 |
SVD5867NLT4G | ON Semiconductor | MOSFET N-CH 60V 18A DPAK | 350 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 39mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 3.3W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6A (Ta), 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 39mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 3.3W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 39mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 3.3W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |