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| Datasheet | NVD6416ANLT4G |
| File Size | 131.11 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NVD6416ANLT4G, NTD6416ANL-1G, NVD6416ANLT4G-VF01, NTD6416ANLT4G |
| Description | MOSFET N-CH 100V 19A DPAK, MOSFET N-CH 100V 19A IPAK, MOSFET N-CH 100V 19A DPAK, MOSFET N-CH 100V 19A DPAK |
NVD6416ANLT4G - ON Semiconductor
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 74mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1nF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK (SINGLE GAUGE) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 74mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 74mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 74mOhm @ 19A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |