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NVMFD5C650NLT1G Datasheet

NVMFD5C650NLT1G Cover
DatasheetNVMFD5C650NLT1G
File Size140.47 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NVMFD5C650NLT1G, NVMFD5C650NLWFT1G
Description MOSFET 2N-CH 60V 111A S08FL, MOSFET 2N-CH 60V 111A S08FL

NVMFD5C650NLT1G - ON Semiconductor

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URL Link

NVMFD5C650NLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 111A (Tc)

Rds On (Max) @ Id, Vgs

4.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 98µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

2546pF @ 25V

Power - Max

3.5W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual)

NVMFD5C650NLWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 111A (Tc)

Rds On (Max) @ Id, Vgs

4.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 98µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

2546pF @ 25V

Power - Max

3.5W (Ta), 125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual)