Datasheet | NVMFS4C03NWFT1G |
File Size | 133.95 KB |
Total Pages | 6 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | NVMFS4C03NWFT1G, NVMFS4C03NWFT3G, NVMFS4C03NT3G, NVMFS4C03NT1G |
Description | MOSFET N-CH 30V 31.4A SO8FL, MOSFET N-CH 30V 31.4A SO8FL, MOSFET N-CH 30V 31.4A SO8FL, MOSFET N-CH 30V 31.4A SO8FL |
NVMFS4C03NWFT1G - ON Semiconductor
The Products You May Be Interested In
NVMFS4C03NWFT1G | ON Semiconductor | MOSFET N-CH 30V 31.4A SO8FL | 308 More on Order |
|
NVMFS4C03NWFT3G | ON Semiconductor | MOSFET N-CH 30V 31.4A SO8FL | 364 More on Order |
|
NVMFS4C03NT3G | ON Semiconductor | MOSFET N-CH 30V 31.4A SO8FL | 130 More on Order |
|
NVMFS4C03NT1G | ON Semiconductor | MOSFET N-CH 30V 31.4A SO8FL | 2308 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 31.4A (Ta), 143A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3071pF @ 15V FET Feature - Power Dissipation (Max) 3.71W (Ta), 77W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 31.4A (Ta), 143A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3071pF @ 15V FET Feature - Power Dissipation (Max) 3.71W (Ta), 77W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 31.4A (Ta), 143A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3071pF @ 15V FET Feature - Power Dissipation (Max) 3.71W (Ta), 77W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 31.4A (Ta), 143A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3071pF @ 15V FET Feature - Power Dissipation (Max) 3.71W (Ta), 77W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |