
Datasheet | NVMFS6B05NLWFT3G |
File Size | 82.76 KB |
Total Pages | 6 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 4 part numbers |
Associated Parts | NVMFS6B05NLWFT3G, NVMFS6B05NLWFT1G, NVMFS6B05NLT3G, NVMFS6B05NLT1G |
Description | MOSFET N-CH 100V 17A 5DFN, MOSFET N-CH 100V 17A 5DFN, MOSFET N-CH 100V 17A 5DFN, MOSFET N-CH 100V 17A 5DFN |
NVMFS6B05NLWFT3G - ON Semiconductor






The Products You May Be Interested In
![]() |
NVMFS6B05NLWFT3G | ON Semiconductor | MOSFET N-CH 100V 17A 5DFN | 296 More on Order |
![]() |
NVMFS6B05NLWFT1G | ON Semiconductor | MOSFET N-CH 100V 17A 5DFN | 212 More on Order |
![]() |
NVMFS6B05NLT3G | ON Semiconductor | MOSFET N-CH 100V 17A 5DFN | 222 More on Order |
![]() |
NVMFS6B05NLT1G | ON Semiconductor | MOSFET N-CH 100V 17A 5DFN | 272 More on Order |
URL Link
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 165W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 165W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 165W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 165W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |