Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NVMFS6H818NT1G |
| File Size | 135.82 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NVMFS6H818NT1G, NVMFS6H818NWFT1G |
| Description | TRENCH 8 80V NFET, TRENCH 8 80V NFET |
NVMFS6H818NT1G - ON Semiconductor
The Products You May Be Interested In
 |
NVMFS6H818NT1G | ON Semiconductor | TRENCH 8 80V NFET | 464 More on Order |
 |
NVMFS6H818NWFT1G | ON Semiconductor | TRENCH 8 80V NFET | 2178 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 20A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 20A (Ta), 123A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4V @ 190µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |