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| Datasheet | NVTFS4C08NWFTAG |
| File Size | 141.79 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NVTFS4C08NWFTAG, NVTFS4C08NWFTWG, NVTFS4C08NTWG, NVTFS4C08NTAG |
| Description | MOSFET N-CH 30V 55A U8FL, MOSFET N-CH 30V 55A U8FL, MOSFET N-CH 30V 55A U8FL, MOSFET N-CH 30V 55A U8FL |
NVTFS4C08NWFTAG - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1113pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 31W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1113pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 31W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1113pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 31W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 17A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.2nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1113pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 31W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |