Semiconductors
Passive Components
Sensors
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Optoelectronics
| Datasheet | NXPSC08650Q |
| File Size | 229.85 KB |
| Total Pages | 10 |
| Manufacturer | WeEn Semiconductors |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NXPSC08650Q |
| Description | DIODE SCHOTTKY 650V 8A TO220AC |
NXPSC08650Q - WeEn Semiconductors
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NXPSC08650Q | WeEn Semiconductors | DIODE SCHOTTKY 650V 8A TO220AC | 240 More on Order |
URL Link
www.oemstron.com/datasheet/NXPSC08650Q
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Manufacturer WeEn Semiconductors Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 230µA @ 650V Capacitance @ Vr, F 260pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 175°C (Max) |