Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

PBRN113ZS Datasheet

PBRN113ZS,126 Cover
DatasheetPBRN113ZS,126
File Size736.86 KB
Total Pages17
ManufacturerNXP
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts PBRN113ZS,126, PBRN113ZK,115, PBRN113ZT,215
Description TRANS PREBIAS NPN 0.7W TO92-3, TRANS PREBIAS NPN 250MW SMT3, TRANS PREBIAS NPN 250MW TO236AB

PBRN113ZS,126 - NXP

PBRN113ZS Datasheet Page 1
PBRN113ZS Datasheet Page 2
PBRN113ZS Datasheet Page 3
PBRN113ZS Datasheet Page 4
PBRN113ZS Datasheet Page 5
PBRN113ZS Datasheet Page 6
PBRN113ZS Datasheet Page 7
PBRN113ZS Datasheet Page 8
PBRN113ZS Datasheet Page 9
PBRN113ZS Datasheet Page 10
PBRN113ZS Datasheet Page 11
PBRN113ZS Datasheet Page 12
PBRN113ZS Datasheet Page 13
PBRN113ZS Datasheet Page 14
PBRN113ZS Datasheet Page 15
PBRN113ZS Datasheet Page 16
PBRN113ZS Datasheet Page 17

The Products You May Be Interested In

PBRN113ZS,126 PBRN113ZS,126 NXP TRANS PREBIAS NPN 0.7W TO92-3 420

More on Order

PBRN113ZK,115 PBRN113ZK,115 NXP TRANS PREBIAS NPN 250MW SMT3 412

More on Order

PBRN113ZT,215 PBRN113ZT,215 Nexperia TRANS PREBIAS NPN 250MW TO236AB 49509

More on Order

URL Link

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

700mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3; MPAK

PBRN113ZT,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

40V

Resistor - Base (R1)

1 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

500 @ 300mA, 5V

Vce Saturation (Max) @ Ib, Ic

1.15V @ 8mA, 800mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB