Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | PDTD143EQAZ |
| File Size | 2,341.98 KB |
| Total Pages | 24 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | PDTD143EQAZ, PDTD123EQAZ, PDTD114EQAZ, PDTD113EQAZ |
| Description | TRANS PREBIAS NPN 3DFN, TRANS PREBIAS NPN 3DFN, TRANS PREBIAS NPN 3DFN, TRANS PREBIAS NPN 3DFN |
PDTD143EQAZ - Nexperia
The Products You May Be Interested In
 |
PDTD143EQAZ | Nexperia | TRANS PREBIAS NPN 3DFN | 305 More on Order |
 |
PDTD123EQAZ | Nexperia | TRANS PREBIAS NPN 3DFN | 401 More on Order |
 |
PDTD114EQAZ | Nexperia | TRANS PREBIAS NPN 3DFN | 191 More on Order |
 |
PDTD113EQAZ | Nexperia | TRANS PREBIAS NPN 3DFN | 389 More on Order |
URL Link
|
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 210MHz Power - Max 325mW Mounting Type Surface Mount Package / Case 3-XDFN Exposed Pad Supplier Device Package DFN1010D-3 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 210MHz Power - Max 325mW Mounting Type Surface Mount Package / Case 3-XDFN Exposed Pad Supplier Device Package DFN1010D-3 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 10 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 210MHz Power - Max 325mW Mounting Type Surface Mount Package / Case 3-XDFN Exposed Pad Supplier Device Package DFN1010D-3 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 1 kOhms Resistor - Emitter Base (R2) 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 210MHz Power - Max 325mW Mounting Type Surface Mount Package / Case 3-XDFN Exposed Pad Supplier Device Package DFN1010D-3 |