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| Datasheet | PHB191NQ06LT,118 |
| File Size | 323.99 KB |
| Total Pages | 14 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHB191NQ06LT,118 |
| Description | MOSFET N-CH 55V 75A D2PAK |
PHB191NQ06LT,118 - Nexperia
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PHB191NQ06LT,118 | Nexperia | MOSFET N-CH 55V 75A D2PAK | 3949 More on Order |
URL Link
www.oemstron.com/datasheet/PHB191NQ06LT,118
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 95.6nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 7665pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |