Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | PHD20N06T,118 |
| File Size | 855.13 KB |
| Total Pages | 12 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHD20N06T,118 |
| Description | MOSFET N-CH 55V 18A DPAK |
PHD20N06T,118 - Nexperia
The Products You May Be Interested In
 |
PHD20N06T,118 | Nexperia | MOSFET N-CH 55V 18A DPAK | 439 More on Order |
URL Link
www.oemstron.com/datasheet/PHD20N06T,118
|
Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 77mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 422pF @ 25V FET Feature - Power Dissipation (Max) 51W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |