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| Datasheet | PHK04P02T,518 |
| File Size | 299.82 KB |
| Total Pages | 13 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHK04P02T,518 |
| Description | MOSFET P-CH 16V 4.66A 8-SOIC |
PHK04P02T,518 - Nexperia
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PHK04P02T,518 | Nexperia | MOSFET P-CH 16V 4.66A 8-SOIC | 365 More on Order |
URL Link
www.oemstron.com/datasheet/PHK04P02T,518
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Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 16V Current - Continuous Drain (Id) @ 25°C 4.66A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 600mV @ 1mA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 528pF @ 12.8V FET Feature - Power Dissipation (Max) 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |