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| Datasheet | PHK18NQ03LT,518 |
| File Size | 152.25 KB |
| Total Pages | 11 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHK18NQ03LT,518 |
| Description | MOSFET N-CH 30V 20.3A 8-SOIC |
PHK18NQ03LT,518 - Nexperia
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PHK18NQ03LT,518 | Nexperia | MOSFET N-CH 30V 20.3A 8-SOIC | 383 More on Order |
URL Link
www.oemstron.com/datasheet/PHK18NQ03LT,518
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 20.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.9mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 12V FET Feature - Power Dissipation (Max) 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |