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| Datasheet | PHK4NQ20T,518 |
| File Size | 233.85 KB |
| Total Pages | 12 |
| Manufacturer | NXP |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHK4NQ20T,518 |
| Description | MOSFET N-CH 200V 4A SOT96-1 |
PHK4NQ20T,518 - NXP
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URL Link
www.oemstron.com/datasheet/PHK4NQ20T,518
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 130mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 25V FET Feature - Power Dissipation (Max) 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |