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| Datasheet | PHKD3NQ10T,518 |
| File Size | 291.31 KB |
| Total Pages | 13 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | PHKD3NQ10T,518 |
| Description | MOSFET 2N-CH 100V 3A 8SOIC |
PHKD3NQ10T,518 - Nexperia
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URL Link
www.oemstron.com/datasheet/PHKD3NQ10T,518
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Manufacturer Nexperia USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 3A Rds On (Max) @ Id, Vgs 90mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 633pF @ 20V Power - Max 2W Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |